AI data centers, smartphones and other systems require increasingly more memory, resulting in rising energy consumption. The NAND technology therefore comes at the right time.
Samsung has developed a new generation of NAND flash that consumes up to 96 percent less power than current generation storage chips. This is evident from a research paper by Samsung researchers that WCCF TECH was able to review.
Transistors make the difference
The new storage technology uses ferroelectric transistors instead of oxide semiconductors that are used today. These were initially unsuitable for powerful chips due to their high threshold voltage, but that very disadvantage turned out to be an advantage.
By blocking currents below that threshold voltage, leakage currents can be better controlled. This is necessary in NAND storage, as the cells are connected in series and each additional layer or capacity normally leads to more losses and higher power consumption. The new design limits this.
Up to 96 percent less consumption
According to the researchers, this approach can reduce NAND flash consumption by nearly 96 percent during read and write operations. The more layers a chip has, the greater the gain. However, the research does not yet mention a timeline for consumers, only companies can start using it soon. When Samsung can get the technology into mass production, the savings would have an effect on everything from data centers to smartphones and wearables.